<Description>
IXGH24N60AU1
IGBT transistor

<Transistor Type>   1 - IGBT;  2 - MOSFET
1


<Output characteristic>   @ Tj=25*C, Vge=15V
% Vce[V]    Ic[A]
0.59        0
1.24        0.65
2.00        3.04
2.18        5.00
2.43        10.04
2.85        20.02
3.26        30.01
3.67        40.09
4.76        60.14
5.75        80.04
6.98        99.94



<Diode characteristic>    @ Tj=25*C
% Vf[V]     If[A]
0.87        0
1.09        2.4
1.23        6.3
1.32        10.6
1.38        15.2
1.50        28.0
1.60        40.2
1.72        60.3
1.84        80.3
1.94        100.3



<Switch-on loss>    @ Tj=150*C
% Ic[A]     Eon[mJ]   
10          0.26
30          0.95
50          1.66


<Switch-off loss>    @ Tj=150*C
% Ic[A]      Eoff[mJ]   
10           0.75
30           2.74
50           4.76


<Diode reverse recovery charge>
2      % [nC]



