<Description>
IRG4PC50FD
IGBT transistor - example

<Transistor Type>   1 - IGBT;  2 - MOSFET
1


<Output characteristic>   @ Tj=150*C, Vge=15V
% Vce[V]    Ic[A]
0.60        1
0.83        5
0.99        10
1.75        50
2.50        103
5.00        277


<Diode characteristic>    @ Tj=150*C
% Vf[V]    If[A]
0.73       1
0.95       4
1.17       10
1.42       20
1.77       40
2.04       60
2.28       80
2.47       100



<Switch-on loss>    @ Tj=150*C
% Ic[A]     Eon[mJ]
0           0   
19.9        1.2
40.0        2.7
60.0        4.5
78.7        6.2


<Switch-off loss>    @ Tj=150*C
% Ic[A]      Eoff[mJ]
0            0   
19.9         1.9
40.0         4.3
60.0         7.2
78.7         9.8


<Diode reverse recovery charge>
1200      % [nC]



