<Description>
FS820R08A6P2B
IGBT transistor

<Transistor Type>   1 - IGBT;  2 - MOSFET
1


<Output characteristic>   @ Tj=150*C, Vge=15V
% Vce[V]    Ic[A]
0.25         0
0.5          21
0.85         200
1.12         497
2.25         1600


<Diode characteristic>    @ Tj=150*C
% Vf[V]    If[A]
0.43       0
0.60       24
0.80       94
1          213
1.20       386
1.48       694
1.76       1095
2.05       1593


<Switch-on loss>    @ Tj=150*C
% Ic[A]     Eon[mJ]   
46          3.6
300         14.09
600         29.7
900         48.18


<Switch-off loss>    @ Tj=150*C
% Ic[A]      Eoff[mJ]   
46           5.57
300          19.77
600          42.30
900          69.09

<Diode switch-on loss>    @ Tj=150*C
% If[A]      Erec[mJ]   
46           3.41
200          8.27
400          11.95
600          14.43
900          17.68



