<Description>
FF11MR12W1M1_B11
SiC MOSFET transistor (Infineon)

<Transistor Type>   1 - IGBT;  2 - MOSFET
2


<Drain-source resistance> Drain-to-source on-state resistance vs. drain current 
% Id[A]     Rds_on[mOhm]         @ Tj=125*C, Vgs=15V
0           14.8
100         14.8


<Driver output voltage> 
15   % [V]


<Switch-on loss>    @ Tj=125*C
% Id[A]     Eon[mJ]   
0           0
10.174      0.39770
25.000      0.59207
49.855      0.89898
74.709      1.1803
100.00      1.4361
124.85      1.6662
150.15      1.8760
175.00      2.0652
199.85      2.2391


<Switch-off loss>    @ Tj=125*C
% Id[A]      Eoff[mJ]   
0            0
10.174       0.10614
25.000       0.12660
39.390       0.16752
49.855       0.22379
75.145       0.41816
100.00       0.68414
124.85       1.0013
149.71       1.3491
175.00       1.7174
199.85       2.0959


<Diode reverse recovery charge>
0      % [nC]


<Diode characteristic>    @ Tj=125*C
% Vf[V]    If[A]
4.2765      0
4.3         32
4.35        100