<Description>
IAUT300N08S5N012
MOSFET transistor

<Transistor Type>   1 - IGBT;  2 - MOSFET
2


<Drain-source resistance> Drain-to-source on-state resistance vs. drain current 
% Id[A]     Rds_on[mOhm]         @ Tj=25*C, Vgs=10V
0           1
300         1


<Driver output voltage> 
10   % [V]


<Plateau voltage>
4.5   % [V]


<Gate-drain capacitance>    % Reverse transfer (gate-drain) capacitance vs. drain-source voltage
% Vds[V]      Crss[pF]    
0             2832
4             1610
13            765
20            398
25            202
40            88
60            64
80            62


<Rise time>
19       % [ns]


<Fall time>
55       % [ns]


<Diode reverse recovery charge>
177      % [nC]


<Diode characteristic>    @ Tj=25*C
% Vf[V]    If[A]
0.67       1
0.74       10
0.84       100
0.96       298
1.16       698
1.4        1241